H - Electricity – 01 – L
Patent
H - Electricity
01
L
H01L 41/00 (2006.01) C30B 25/04 (2006.01) C30B 29/32 (2006.01) H01L 41/24 (2006.01)
Patent
CA 2271282
The invention provides a device comprising an oriented, perovskite PZT layer on a diamond substrate, or other substrates such as silicon or platinum-coated materials. Vapor phase deposition processes are used to deposit a PZT layer onto a perovskite template layer on the substrate. The template layer is more readily deposited in a perovskite structure compared to PZT, and provides for nucleation and growth of the deposited PZT in perovskite form. The vapor phase deposition promotes the oriented structure of the resulting film. The structure is useful in a variety of devices, including surface acoustic wave devices.
Du Honghua
Graebner John Edwin
Jin Sungho
Johnson David Wilfred Jr.
Zhu Wei
Kirby Eades Gale Baker
Lucent Technologies Inc.
LandOfFree
Process for fabricating device comprising lead zirconate... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Process for fabricating device comprising lead zirconate..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for fabricating device comprising lead zirconate... will most certainly appreciate the feedback.
Profile ID: LFCA-PAI-O-1414607