H - Electricity – 01 – L
Patent
H - Electricity
01
L
H01L 21/316 (2006.01) C23C 18/12 (2006.01) C30B 7/00 (2006.01) H01L 21/02 (2006.01) H01L 21/3205 (2006.01) H01L 27/08 (2006.01) H01L 27/108 (2006.01) H01L 27/115 (2006.01) H01L 27/22 (2006.01) H01L 43/00 (2006.01) H01L 43/02 (2006.01) H01L 43/12 (2006.01) H01L 21/314 (2006.01)
Patent
CA 2145879
A liquid precursor containing a metal is applied to a substrate (18), RTP baked, and an- nealed to form a layered superlattice material (30). To obtain good electrical properties, prebak- ing the substrate (18) in oxygen in the RTP and anneal are essential, except for high bismuth con- tent precursors. Excess bismuth between 110 % and 140 % of stoichiometry and RTP temperature of 750 °C is optimum. The film is formed in two layers (30A, 30B), the first of which uses a stoi- chiometric precursor and the second of which uses an excess bismuth precursor.
Cuchiaro Joseph D.
Mcmillan Larry D.
Mihara Takashi
Paz de Araujo Carlos A.
Scott Michael C.
Smart & Biggar
Symetrix Corporation
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