Process for fabricating semiconductor devices

Details Process for fabricating semiconductor devices Process for fabricating semiconductor devices

C - Chemistry, Metallurgy

25

F

204/96.05, 148/3

C25F 3/12 (2006.01) H01L 21/3063 (2006.01) H01L 21/465 (2006.01) H01L 21/467 (2006.01)

Patent

CA 1198620

Abstract A procedure is described for producing semiconductor devices having damage-free surfaces in electrochemically n-type and intrinsic compound semiconductors. The process involves a photoetching procedure including applying a potential to the compound semiconductor while it is in contact with an electrolytic solution and irradiating the surface to be etched with light in a certain energy range. By suitable adjustment in the potential, electrolytic solution composition and light energy, the etch rate is made proportional to the light intensity. By suitable variation in light intensity and light-ray direction, various geometrical features can be made on the surface of the compound semiconductor. For example, a hole with straight sides can be made in the compound semiconductor by use of a light spot and parallel (collimated) light rays. An advantageous application of this process is the fabrication of a photodiode with a hole in the center for use in bidirectional communication systems and to monitor power output for optical communication sources. The advantage of this process is that no damage occurs outside etched hole so that a maximum area of the photodiode remains active for detecting incoming radiation. Another advantage of the process is that etching will stop where the material becomes p-type so that etching can be made to stop automatically at a p/n junction.

434273

Affiliated with

Also associated with

Rating

Process for fabricating semiconductor devices does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process for fabricating semiconductor devices, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for fabricating semiconductor devices will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-1204742