Process for formation of cap layer for semiconductor

Details Process for formation of cap layer for semiconductor Process for formation of cap layer for semiconductor

H - Electricity

01

L

H01L 23/28 (2006.01) H01L 21/318 (2006.01)

Patent

CA 2332739

A process for the formation of a cap layer for semiconductors with a low degree of contamination wherein the cap layer is easily formed on the surface of a semiconductor, and binding force thereof with the surface of the semiconductor is strong and stabilized, besides only the cap layer is selectively removed easily, comprises the steps of introducing nitrogen atom into a surface of a semiconductor; combining a component element of the semiconductor in the vicinity of the surface of the semiconductor into which the nitrogen atom has been introduced with the nitrogen atom to form a nitride compound being a compound of the component element of the semiconductor and the nitrogen atom; and utilizing the nitride compound as a cap layer for the surface of the semiconductor.

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