Process for forming a mes electrodes

Details Process for forming a mes electrodes Process for forming a mes electrodes

H - Electricity

01

L

H01L 29/812 (2006.01) H01L 21/285 (2006.01) H01L 21/338 (2006.01)

Patent

CA 2048201

Abstract of the Disclosure There is disclosed a process for forming a MES electrode by applying a metal material to a substrate of a III-V compound semiconductor, the metal material being in Schottky contact with the compound semiconductor, the process comprising: treating a surface of the substrate with a phosphoric acid-based etchant, and then sulfur or selenium-passivating the surface.

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