Process for forming a patterned resist mask using a...

Details Process for forming a patterned resist mask using a... Process for forming a patterned resist mask using a...

G - Physics

03

C

96/266, 96/58

G03C 5/00 (2006.01) G03F 7/32 (2006.01)

Patent

CA 1155326

FI 9-80-019 Process for Forming a Patterned Resist Mask Abstract The performance of ethylene glycol alkylether de- velopers, for positive methacrylate-methacrylic acid copolymer and terpolymer resists, is controlled by add- ing an organic complexing agent, such as citric acid, or a combination of a transition metal salt and a com- plexing agent, such as ammonium citrate, to the de- veloper. The additives provide a consistent develop- ment rate, so that the maximum difference between the dissolution rates of the exposed and unexposed portions of the resist layer can be maintained, regardless of the developer purity.

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