C - Chemistry – Metallurgy – 23 – C
Patent
C - Chemistry, Metallurgy
23
C
23/1, 117/83
C23C 16/448 (2006.01) C23C 16/30 (2006.01)
Patent
CA 934523
Asao Ichiro
Hara Tohru
LandOfFree
Process for forming a ternary material on a substrate does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Process for forming a ternary material on a substrate, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for forming a ternary material on a substrate will most certainly appreciate the feedback.
Profile ID: LFCA-PAI-O-1148552