Process for forming high density silicon carbide and...

Details Process for forming high density silicon carbide and... Process for forming high density silicon carbide and...

C - Chemistry, Metallurgy

04

B

25/130, 261/6

C04B 35/52 (2006.01) C04B 35/565 (2006.01) C04B 35/573 (2006.01) C04B 35/575 (2006.01) C04B 35/71 (2006.01)

Patent

CA 1063134

ABSTRACT OF THE DISCLOSURE High density sintered silicon carbide articles are formed by first forming a green blank or billet out of powdered silicon carbide, heat treating the billet to cause it to lightly sinter and become partially densified, shaping the billet to the desired final dimensions and configuration, and fully sintering and densifying the partially sintered shape by heat alone or by heat in the presence of silicon. The product of the process possesses high mechanical strength and may be very fine grained.

237138

Affiliated with

Also associated with

Rating

Process for forming high density silicon carbide and... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process for forming high density silicon carbide and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for forming high density silicon carbide and... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-652207