H - Electricity – 01 – L
Patent
H - Electricity
01
L
356/125
H01L 21/265 (2006.01) H01L 21/8238 (2006.01) H01L 29/78 (2006.01)
Patent
CA 1256588
PROCESS FOR FORMING LDD MOS/CMOS STRUCTURE Abstract of the Disclosure A process for selectively forming NMOS/PMOS/CMOS integrated circuits and for selectively incorporating any or all of lightly doped drain-source (LDD) regions, sidewall gate oxide structures, and guard band regions.
526713
Miller Gayle W.
Szluk Nicholas J.
Ncr Corporation
Smart & Biggar
LandOfFree
Process for forming ldd mos/cmos structures does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Process for forming ldd mos/cmos structures, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for forming ldd mos/cmos structures will most certainly appreciate the feedback.
Profile ID: LFCA-PAI-O-1178041