Process for forming low resistivity titanium nitride films

Details Process for forming low resistivity titanium nitride films Process for forming low resistivity titanium nitride films

C - Chemistry, Metallurgy

23

C

C23C 16/34 (2006.01) C23C 16/56 (2006.01) H01L 21/318 (2006.01)

Patent

CA 2114716

2114716 9304214 PCTABS00020 A process for forming low resistivity titanium nitride films on a silicon substrate by chemical vapor deposition includes a post-deposition (5) ammonia anneal to provide hydrogen atoms which chemically react with chlorine atoms entrained within the titanium nitride film. The titanium nitride film is deposited by placing the silicon substrate in a reaction chamber, heating the silicon substrate within (10) the reaction chamber, initially passing both TiCl4 gas and NH3 gas into the reaction chamber over the silicon substrate to deposite titanium nitride upon a surface of the silicon substrate, and thereafter discontinuing the flow of TiCl4 gas while continuing to pass NH3 gas (15) into the reaction chamber over the silicon substrate to react with and remove residual chlorine atoms retained by the deposited titanium nitride film.

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