G - Physics – 03 – F
Patent
G - Physics
03
F
96/175, 96/266,
G03F 7/32 (2006.01) G03F 7/039 (2006.01)
Patent
CA 1164261
Abstract: Process for forming resist patterns Disclosed is a process for forming resist patterns by coating on a substrate at least one selected from homo- polymers of a monomer represented by the formula: Image and copolymers of said monomer with other vinyl monomers, applying radiation to a desired portion thereof, and thereafter carrying out development treatment with use of a developer, which is characterized in that said developer is composed of one or more of ketones selected from the group consisting of 2-butanone, 2-methyl-3- butanone, 2-pentanone, 3-pentanone and 4-methyl-2- pentanone; or mixture thereof with other ketone and/or alcohol, except for a single use of 2-butanone and a combination of 4-methyl-2-pentanone and alcohol.
400774
Miura Akira
Tada Tsukasa
Marks & Clerk
Tokyo Shibaura Denki Kabushiki Kaisha
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