Process for growing crystalline material

Details Process for growing crystalline material Process for growing crystalline material

C - Chemistry, Metallurgy

30

B

148/1.2

C30B 27/00 (2006.01) C30B 11/00 (2006.01) C30B 35/00 (2006.01)

Patent

CA 1222436

- 15 - ABSTRACT PROCESS FOR GROWING CRYSTALLINE MATERIAL A process is described for growing crystals by cooling A melt in a container (12) (i.e., boat or crucible) in which an inert encapsulating substance (15) is interspersed between melt and container to prevent adhesion of the crystal to the container and prevent contamination of the crystal from container material. Particularly good results are obtained with semiconductor compounds such as gallium arsenide where crystals grown using boron oxide as the encapsulating substance consistently have low defect density, low strains and low contamination densities.

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