C - Chemistry – Metallurgy – 30 – B
Patent
C - Chemistry, Metallurgy
30
B
C30B 1/00 (2006.01) C30B 1/02 (2006.01) H01L 21/20 (2006.01)
Patent
CA 2048517
A process for growing a crystalline thin film comprises forming a crystalline region comprising a single crystal-nucleus or crystal-grain at a predetermined position of an amorphous thin film, then implanting ions of at least one element constituting the amorphous thin film into a region other than the crystalline region and thereafter carrying out heat treatment to have the crystal-nucleus or crystal-grain grown along the plane direction of the amorphous thin film, thereby crystallizing the amorphous film by solid phase growth.
Méthode pour obtenir un mince film cristallisé, consistant à former une région cristalline comprenant un noyau cristallin ou un grain cristallin unique à un site déterminé d'avance d'un mince film amorphe, à implanter des ions d'au moins un élément constituant le mince film amorphe dans une région autre que la région cristalline, puis à appliquer un traitement thermique pour faire croître le noyau cristallin ou le grain cristallin le long du plan du mince film amorphe, en cristallisant ainsi le film amorphe par croissance en phase solide.
Canon Kabushiki Kaisha
Ridout & Maybee Llp
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