Process for growing silicon carbide whiskers by undercooling

Details Process for growing silicon carbide whiskers by undercooling Process for growing silicon carbide whiskers by undercooling

C - Chemistry, Metallurgy

01

B

23/54

C01B 31/36 (2006.01) C30B 25/00 (2006.01)

Patent

CA 1274967

ABSTRACT OF THE DISCLOSURE A method of growing silicon carbide whiskers, especially in the 8 form, uses a heating schedule wherein the temperature of the atmosphere in the growth zone of a furnace is first heated to or beyond the growth temperature and then is cooled to or below the growth temperature to induce nucleation of whiskers at catalyst sites at a desired point in time which results in the selection.

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