Process for increasing silicon thermal decomposition...

Details Process for increasing silicon thermal decomposition... Process for increasing silicon thermal decomposition...

C - Chemistry, Metallurgy

30

B

148/2.3

C30B 29/60 (2006.01) C01B 33/035 (2006.01) C30B 25/02 (2006.01) C30B 25/14 (2006.01) C30B 25/18 (2006.01)

Patent

CA 1178177

C19-21-0285A PROCESS FOR INCREASING SILICON THERMAL DECOMPOSITION DEPOSITION RATES FROM SILICON HALIDE-HYDROGEN REACTION GASES Abstract of the Disclosure Process for increasing silicon deposition rates from silicon halide-hydrogen reaction gases wherein electronic-grade silicon bodies are produced from the deposition of silicon upon silicon slim rods heated and introduced into and pulled through a chemical vapor deposition chamber, the increased silicon deposition rates resulting from introducing small percentages by weight of silane to the silicon halide-hydrogen reaction gases, for example, silicon tetrachloride and/or trichlorosilane.

382624

Affiliated with

Also associated with

Rating

Process for increasing silicon thermal decomposition... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process for increasing silicon thermal decomposition..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for increasing silicon thermal decomposition... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-1265500