G - Physics – 02 – B
Patent
G - Physics
02
B
G02B 5/00 (2006.01) G02B 6/124 (2006.01) H01S 5/026 (2006.01) H01S 5/12 (2006.01) H01S 5/125 (2006.01) G02B 6/12 (2006.01)
Patent
CA 2194087
o produce a Bragg grating on a semiconducting component, a wet chemical etching is done through a resin mask that is revealed after holographic exposure. Regions of the grating situated at the frontier of other parts of the component then show deeper etching. To compensate, the process used is to make an additional exposure through a second mask (E) at a distance from the part of the resin mask (7) that determines the grating's location. Applicable to optoelectronic components.
Pour réaliser un réseau de Bragg dans un composant semi-conducteur, on effectue une gravure humide à travers un masque de résine révélé après une exposition holographique. Les régions du réseau situées à la frontière d'autres parties du composant présentent alors des gravures plus profondes. Pour compenser ce phénomène, le procédé consiste à effectuer une irradiation complémentaire a travers un second masque (E) placé à distance de la partie du masque de résine (7) qui définit la localisation du réseau. Application aux composants optoélectroniques.
Bodere Alain
Carpentier Daniele
Alcatel Optronics
Robic
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