Process for joining molded silicon nitride parts

Details Process for joining molded silicon nitride parts Process for joining molded silicon nitride parts

C - Chemistry, Metallurgy

04

B

25/123

C04B 37/00 (2006.01) C04B 35/58 (2006.01) C04B 41/88 (2006.01)

Patent

CA 1306100

ABSTRACT OF THE DISCLOSURE. For joining shaped bodies of silicon nitride together, silicon nitride surfaces to be joined are first polished and then put into an apparatus for applying sputtered layers where they are first cleaned by ion bombardment in argon, followed immediately by sputtering with silicon in a nitrogen atmosphere such that a layer is deposited having a nitrogen content exceeding the Si3N4 stoichiometric ratio. This readily provides a layer of the composition Si3N5.5. A complementary nitrogen deficient layer is also provided in the joint before hot pressing,either in the form of a silicon layer that goes between the nitrogen-rich silicon nitride layers or in the form of a nitrogen-deficient silicon nitride layer sputtered onto a polished silicon nitride surface at relatively low nitrogen pressure. The parts are isostatically hot pressed together at 1500 to 1750°C in a nitrogen atmosphere. The layers which are usually thinner than 1 µm interact,with the disappearance of excess nitrogen and silicon, so that once the joint is produced all traces of jointure tend to disappear. The presence of a small amount of Y2O3 at the joint has a favorable effect.

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