Process for making a semiconductor device

Details Process for making a semiconductor device Process for making a semiconductor device

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H01L 21/36 (2006.01) H01L 21/033 (2006.01) H01L 21/225 (2006.01) H01L 21/318 (2006.01) H01L 29/78 (2006.01)

Patent

CA 1223975

ABSTRACT OF THE INVENTION A process for manufacturing a high voltage DMOS (Deep Diffusion Metal Oxide Semiconductor) transistor includes a first ion implantation and driven step to form a P-well in a N-substrate, and a second such step to form a N+ region in this well and a channel between this region and the substrate and under a polysilicon gate which is covered with a silicon nitride layer during the first step. By the presence of the latter layer pitting of the gate is prevented and no leakage paths are formed between source and drain.

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