Process for making crack-free silicon carbide diffusion...

C - Chemistry – Metallurgy – 04 – B

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C04B 35/573 (2006.01) C04B 38/00 (2006.01) C30B 31/10 (2006.01)

Patent

CA 2267854

This invention relates to a method for producing a crack-free sintered silicon carbide body, comprising the steps of: a) providing a raw powder batch comprising: i) at least 40 w/o fine grain fraction having a particle size of less than 10 microns, the fine grain fraction comprising silicon carbide; ii) at least 40 w/o coarse grain fraction having a particle size of at least 30 microns, the coarse grain fraction comprising silicon carbide and less than 0.10 w/o free carbon, the raw batch having a total silica content of at least 0.5 w/o, the raw batch having a total silicon carbide content of at least 96 w/o; b) forming the raw batch into a green body; and c) recrystallizing the green body to provide a recrystallized silicon carbide body having a density of between 2.0 g/cc and 2.8 g/cc.

L'invention a trait à un procédé destiné à la fabrication d'un corps à carbure de silicium fritté exempt de craquelures, comprenant les étapes consistant: a) à prévoir un lot de poudre brute comprenant: 1) au moins 40 % en poids d'une fraction à grain fin possédant une taille de particules inférieure à 10 microns, la fraction à grain fin comprenant du carbure de silicium, 2) au moins 40 % en poids d'une fraction à gros grain possédant une taille de particules d'au moins 30 microns, la fraction à gros grain comprenant du carbure de silicium et moins de 0,10 % en poids de carbone libre, ce lot brut ayant un contenu total en silice d'au moins 0,5 % en poids, et un contenu total en carbure de silicium d'au moins 96 % en poids, b) à former ce lot brut en une ébauche crue, et c) à recristalliser cette ébauche crue afin d'obtenir un corps à carbure de silicium recristallisé présentant une densité située entre 2,0 g/cm<3> et 2,8 g/cm<3>.

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