Process for making diamond, doped diamond, diamond-cubic...

Details Process for making diamond, doped diamond, diamond-cubic... Process for making diamond, doped diamond, diamond-cubic...

C - Chemistry, Metallurgy

23

C

117/74, 204/96.3

C23C 14/06 (2006.01) C23C 14/00 (2006.01) C23C 14/30 (2006.01) C23C 14/32 (2006.01)

Patent

CA 2018886

PROCESS FOR MAKING DIAMOND, DOPED DIAMOND, DIAMOND-CUBIC BORON NITRIDE COMPOSITE FILMS AT LOW TEMPERATURE ABSTRACT OF THE INVENTION A process and apparatus that may be used for the production of diamond and doped diamond films at high rates by activated reactive vapor deposition. Carbon is evaporated in a vacuum chamber(10) in the presence of atomic hydrogen containing plasma to form diamond precur- sors which then deposit on a substrate(24) located within the vacuum chamber. The substrate temperature is main- tained at between about 20-600°C.

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