C - Chemistry – Metallurgy – 23 – F
Patent
C - Chemistry, Metallurgy
23
F
96/266
C23F 1/02 (2006.01) H05K 3/06 (2006.01) H05K 1/16 (2006.01) H05K 3/00 (2006.01) H05K 3/38 (2006.01)
Patent
CA 1113296
PROCESS FOR MAKING ELECTRODE WITH INTEGRAL DIELECTRIC LAYER ABSTRACT OF THE INVENTION A process of fabricating switching device elec- trodes with an integral dielectric layer. The method permits the dielectric layer to serve also as the photoresist during the electrode etching step of the process.
305740
Sim & Mcburney
Xerox Corporation
LandOfFree
Process for making electrode with integral dielectric layer does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Process for making electrode with integral dielectric layer, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for making electrode with integral dielectric layer will most certainly appreciate the feedback.
Profile ID: LFCA-PAI-O-818686