Process for making field effect and bipolar transistors on...

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H01L 21/70 (2006.01) H01L 21/265 (2006.01) H01L 21/74 (2006.01) H01L 21/762 (2006.01) H01L 21/8249 (2006.01) H01L 27/06 (2006.01)

Patent

CA 1079864

PROCESS FOR MAKING FIELD EFFECT AND BIPOLAR TRANSISTORS ON THE SAME SEMICONDUCTOR CHIP Abstract A process and the resulting structure for making metal oxide silicon field effect transistors and vertical bipolar transistors on the same semiconductor chip with the devices being dielectrically isolated from each other. The process does not require an epitaxial layer. The bipolar devices have utility as cross-chip or off- chip drivers or can be utilized for analog circuitry.

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