Process for making large area isolation trenches

Details Process for making large area isolation trenches Process for making large area isolation trenches

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H01L 21/76 (2006.01) H01L 21/033 (2006.01) H01L 21/263 (2006.01) H01L 21/3065 (2006.01) H01L 21/762 (2006.01) H01L 21/768 (2006.01)

Patent

CA 1139017

Abstract A semiconductor substrate is selectively etched to produce a spaced succession of narrow, shallow trenches separated by narrow silicon mesas. Silicon oxide is chemical-vapor- deposited on the horizontal and vertical surfaces of the etched structure to a thickness equalling the width of a desired silicon oxide mask. The mask is used for etching multiple deep trenches in the substrate, the trenches being separated by thin walls of silicon. The thickness of the walls is uniformly equal to and determined by the thick- ness of the deposited silicon oxide mask. The deposited silicon oxide is reactively ion etched away from the hori- zontal surfaces, leaving the oxide only on the sidewalls of the shallow trenches. The silicon is deeply etched, using the remaining oxide as a mask. Boron is ion im- planted and the resulting structure is thermally oxidized sufficiently to completely oxidize the silicon under the deposited oxide mask and to oxidize the silicon surfaces at the bottoms of the trenches. The remaining trench volume is filled in with chemical-vapor-deposited silicon dioxide.

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