G - Physics – 01 – N
Patent
G - Physics
01
N
G01N 27/12 (2006.01) H01L 35/34 (2006.01)
Patent
CA 2169479
Process for manufacturing a semiconductor element, particularly for a flue gas detector, wherein two or more different substances, at least one of which is a semiconductor in insoluble powder form, are dispersed in powder form in a solvent, and the heterogeneous suspension of the semiconductor material thus obtained is applied in granular form to an insulating substrate with a specific resistivity value of at least 10 12 .OMEGA. cm.
Procédé de fabrication d'un élément semi-conducteur, destiné en particulier à un détecteur de gaz produit par combustion, suivant lequel au moins deux substances différentes, dont au moins une est un semi-conducteur à l'état de poudre insoluble, sont dispersés à l'état poudreux dans un solvant, la suspension hétérogène ainsi obtenue est appliquée à l'état de grain de la substance semi-conductrice sur un substrat isolant, dont la valeur résistivité spécifique est d'au moins 10<12> OMEGA cm.
de Haan Andre
Gowling Lafleur Henderson Llp
LandOfFree
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