C - Chemistry – Metallurgy – 30 – B
Patent
C - Chemistry, Metallurgy
30
B
148/1.5
C30B 15/04 (2006.01) C30B 27/02 (2006.01)
Patent
CA 1212599
ABSTRACT OF THE DISCLOSURE A process for manufacturing boron-doped GaAs single crystals which comprises preparing a mixture of boron, gallium and arsenic covered by a liquid B2O3 encapsulant, melting the mixture, pulling up boron-doped GaAs crystals from the mixture melts in accordance with the LEC method, crushing those crystals into small pieces after removing the seed end therefrom, remelting those pieces in the presence of B2O3, and pulling up single crystals from the mixture melts in accordance with the LEC method.
425974
Kawasaki Akihisa
Kotani Toshihiro
Miyazawa Shintaro
Nanishi Yasushi
Tada Kohji
Nippon Telegraph And Telephone Corporation
Riches Mckenzie & Herbert Llp
Sumitomo Electric Industries Ltd.
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