Process for manufacturing semiconductor bicmos devices

Details Process for manufacturing semiconductor bicmos devices Process for manufacturing semiconductor bicmos devices

H - Electricity

01

L

356/125

H01L 21/027 (2006.01) H01L 21/225 (2006.01) H01L 21/3215 (2006.01) H01L 21/8249 (2006.01) H01L 27/06 (2006.01)

Patent

CA 1271566

- 14 - PROCESS FOR MANUFACTURING SEMICONDUCTOR DEVICES Abstract A process for creating bipolar and CMOS transistors on a p-type silicon substrate is disclosed. The silicon substrate has typical n+ buried wells and field oxide regions to isolate the individual transistor devices. In accordance with the process, stacks of material are created over the gate elements of the CMOS devices and over the emitter elements of the bipolar transistors. The stacks-of material over the gate elements have a silicon dioxide gate layer in contact with the epitaxial layer of the substrate, and the stacks of material over the emitter elements have a polycrystalline silicon layer in contact with the epitaxial layer. Walls of silicon dioxide are created around the stacks in order to insulate the material within the stacks from the material deposited outside of the walls. Polycrystalline silicon in contact with the epitaxial layer is deposited outside the walls surrounding the stacks. All polycrystalline silicon layers in contact with the epitaxial layer are implanted with appropriate dopants such that these layers serve as reservoirs of dopant in order to simultaneously create the source and drain elements of the CMOS devices and the emitter elements of the bipolar devices during a heating step in the process. A tungsten layer is deposited over the polycrystalline layer in order to provide a conductive coupling to aluminum electrodes.

535287

Affiliated with

Also associated with

Rating

Process for manufacturing semiconductor bicmos devices does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process for manufacturing semiconductor bicmos devices, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for manufacturing semiconductor bicmos devices will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-1206287