Process for manufacturing semiconductor bicmos devices

Details Process for manufacturing semiconductor bicmos devices Process for manufacturing semiconductor bicmos devices

H - Electricity

01

L

356/127

H01L 21/82 (2006.01) H01L 21/225 (2006.01) H01L 21/3215 (2006.01) H01L 21/8249 (2006.01) H01L 27/06 (2006.01)

Patent

CA 1273128

- 1 - Abstract: The present invention relates to a process for forming field effect transistors and bipolar transistors in a semiconductor wafer. The method is comprised of the steps of creating layers of appropriately doped polycrystalline silicon material over areas of the semiconductor wafer that are to become source and drain regions of the field effect transistors and emitter regions of the bipolar transistors, and heating the semiconductor wafer. The heating is carried out such that the dopants from the polycrystalline silicon layers are diffused into the semiconductor wafer thereby simultaneously forming the source and drain regions of the field effect transistors and the emitter regions of the bipolar transistors.

610374

Affiliated with

Also associated with

Rating

Process for manufacturing semiconductor bicmos devices does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process for manufacturing semiconductor bicmos devices, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for manufacturing semiconductor bicmos devices will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-1297032