C - Chemistry – Metallurgy – 23 – C
Patent
C - Chemistry, Metallurgy
23
C
C23C 16/48 (2006.01) B05D 1/00 (2006.01) B05D 1/18 (2006.01) B32B 15/08 (2006.01) C09D 5/44 (2006.01) H01L 21/47 (2006.01)
Patent
CA 2438048
The invention concerns a mask-free localised grafting of organic molecules capable of being electrically activated, on a composite surface comprising conductive and/or semiconductive portions, by contacting said organic molecules with said composite surface, whereby the grafting is carried out electrochemically in one single step on specific selected zones of said conductive and/or semiconductive portions, said zones being brought to a potential not less than an electric potential threshold determined relative to a reference electrode, said electric potential threshold being the potential beyond which the grafting of said organic molecules occurs.
Procédé de greffage localisé sans masque de molécules organiques susceptibles d'être électriquement activées, sur une surface composite comprenant des portions conductrices et/ou semi-conductrices, par mise en contact desdites molécules organiques avec ladite surface composite, dans lequel ledit greffage est réalisé électrochimiquement en une seule étape sur des zones choisies, définies, desdites portions conductrices et/ou semi-conductrices, lesdites zones étant portées à un potentiel supérieur ou égal à un potentiel électrique seuil déterminé par rapport à une électrode de référence, ledit potentiel électrique seuil étant le potentiel au-delà duquel se produit le greffage desdites molécules organiques.
Ameur Sami
Bourgoin Jean-Philippe
Bureau Christophe
Charlier Julienne
Palacin Serge
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