Process for plasma enhanced anneal of titanium nitride

Details Process for plasma enhanced anneal of titanium nitride Process for plasma enhanced anneal of titanium nitride

C - Chemistry, Metallurgy

23

C

C23C 14/58 (2006.01) C23C 16/56 (2006.01) H01L 21/321 (2006.01)

Patent

CA 2222227

A titanium nitride film is annealed at a temperature less than 500 ~C by subjecting said titanium nitride film to an RF created plasma generated from a nitrogen-containing gas in a rotating susceptor reactor. The formed film is comparable to a thin film annealed at significantly higher temperatures, making this process useful for integrated circuits containing aluminum elements.

Un film de nitrure de titane est recuit à une température inférieure à 500 ·C, par exposition dudit film à un plasma créé par une haute fréquence à partir d'un gaz comportant de l'azote, dans un réacteur suscepteur en rotation. Le film formé est comparable à un film mince recuit à des températures beaucoup plus élevées, ce qui rend ce procédé utile pour la production de circuits intégrés contenant des éléments en aluminium.

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