Process for plasma etching polysilicon to produce rounded...

Details Process for plasma etching polysilicon to produce rounded... Process for plasma etching polysilicon to produce rounded...

H - Electricity

01

L

204/96.05

H01L 21/306 (2006.01) H01L 21/32 (2006.01) H01L 21/3213 (2006.01)

Patent

CA 1218956

A PROCESS FOR PLASMA ETCHING POLYSILICON TO PRODUCE ROUNDED PROFILE ISLANDS Abstract of the Disclosure In a silicon integrated circuit manufacturing process a layer of polysilicon is ion implanted with an n-type dopant and etched through a mask with a fluorine:chlorine mixture. The etchant undercuts at the mask to an extent dependent on the ratio of chlorine:fluorine and on the dopant level. By appropriately selecting that ratio and dopant level, polysilicon islands having a rounded profile can be achieved, this being most efficacious for subsequent deposition onto the polysilicon. - i -

500503

Affiliated with

Also associated with

Rating

Process for plasma etching polysilicon to produce rounded... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process for plasma etching polysilicon to produce rounded..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for plasma etching polysilicon to produce rounded... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-1240131