Process for plasma-induced chemical vapor deposition of...

Details Process for plasma-induced chemical vapor deposition of... Process for plasma-induced chemical vapor deposition of...

C - Chemistry, Metallurgy

23

C

C23C 14/22 (2006.01) B05D 3/00 (2006.01) C23C 14/12 (2006.01) C23C 16/30 (2006.01)

Patent

CA 2145949

ABSTRACT A process for the plasma-enhanced vapor deposition of a silicon-containing compound having one to three Si atoms onto a surface of glass, mirror, microchip or polymer substrates in flat or complex shape to provide thereon anti-fog and/or anti-scratch coating(s) is provided. The surface modifying step is conducted with a plasma composition derived from a gas stream consisting essentially of from about 80 to 40 mol percent N2O and from about 20 to 60 mol percent CO2.

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