Process for preparing a perovskite type superconductor film

B - Operations – Transporting – 05 – D

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117/103, 117/114

B05D 3/02 (2006.01) B05D 5/12 (2006.01) B32B 18/00 (2006.01) C04B 35/45 (2006.01) H01L 39/24 (2006.01)

Patent

CA 2003850

A perovskite type superconductor film having a high content, almost a single phase, of the high Tc phase is formed by the steps of: depositing at least one first film of a first material (e.g., a composite oxide of Bi-Sr-Ca-Cu-O system or Tl-Ba-Ca-Cu-O system) constituting a perovskite type superconductor over a substrate; depositing at least one second film of a second material containing an oxide or element (Bi2O3 , Tl2O3 , PbOx , etc., particularly PbOx) having a vapor pressure of more than 10 -4 Pa at 800°C at least as a main component over the substrate; to thereby form a stack of the first and second films; and heat treating the stack of the first and second films to form the perovskite type superconductor film on the substrate. Further, preferred compositions of the as-deposited films or stack are determined.

Une pellicule supraconductrice de type perovskite - pratiquement monophasique - à Tc élevée, est formée au cours des étapes suivantes : dépôt d'au moins une première pellicule d'une première matière (p. ex. un oxyde composite d'un système Bi-Sr-Ca-Cu-O ou Tl-Ba-Ca-Cu-O), constituant un supraconducteur de type perovskite sur un substrat; dépôt d'au moins une seconde pellicule d'une deuxième matière renfermant un oxyde ou un élément (Bi2O3, Tl2O3, PbOx, etc., particulièrement PbOx) avec une pression de vapeur de plus de 10-4 Pa à 800 degrés C, au moins comme composante principale sur le substrat, en formant ainsi un empilement de la première et de la seconde pellicules; traitement thermique de l'empilement ainsi créé pour former la pellicule supraconductrice de type perovskite sur le substrat. Enfin, l'invention présente les compositions privilégiées pour les pellicules ou les empilements formés.

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