Process for preparing high crystallinity oxide thin film

C - Chemistry – Metallurgy – 30 – B

Patent

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Details

C30B 23/02 (2006.01) C23C 14/08 (2006.01) C23C 14/22 (2006.01) H01L 21/316 (2006.01)

Patent

CA 2145712

A process for preparing an oxide thin film which has a crystalline, clean and smooth surface on a substrate. The process is conducted by using an apparatus comprising a vacuum chamber in which an oxidizing gas of O2 including O3 can be supplied near the substrate so that pressure around the substrate can be increased while maintaining high vacuum near an evaporation source and Knudsen cell evaporation sources arranged in the vacuum chamber wherein the substrate is heated, molecular beam of constituent atoms of the oxide excluding oxygen are supplied from the K cell evaporation sources, an oxidizing gas is locally supplied to the vicinity of the substrate and a growing thin film is illuminated by ultraviolet.

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