Process for preparing nanostructured materials of controlled...

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B01J 19/08 (2006.01) C01B 13/14 (2006.01) C01F 7/02 (2006.01) C01F 17/00 (2006.01) C23C 4/12 (2006.01) C23C 8/36 (2006.01)

Patent

CA 2481563

A process to prepare stoichiometric-nanostructured materials comprising generating a plasma, forming an "active volume" through introduction of an oxidizing gas into the plasma, before the plasma is expanded into a field-free zone, either (1) in a region in close proximity to a zone of charge carrier generation, or (2) in a region of current conduction between field generating elements, including the surface of the field generation elements, and transferring energy from the plasma to a precursor material to form in the "active volume" at least one stoichiometric-nanostructured material and a vapor that may be condensed to form a stoichiometric-nanostructured material. The surface chemistry of the resulting nanostructured materials is substantially enhanced to yield dispersion stable materials with large zeta- potentials.

L'invention concerne un procédé de préparation de matériaux stoechiométriques nanostructurés qui comprend les étapes consistant: à produire un plasma; à former un volume actif par introduction d'un gaz oxydant dans le plasma, avant que ce dernier ne se développe et forme une zone à champ nul, soit (1) dans une région proche d'une zone de production de vecteur de charge, soit (2) dans une région de conduction de courant située entre des éléments de production de champ; et à transférer de l'énergie du plasma jusqu'à un matériau précurseur afin que soient formés dans ledit volume actif au moins un matériau stoechiométrique nanostructuré et une vapeur pouvant être condensée afin que soit formé un matériau stoechiométrique nanostructuré. La chimie de surface des matériaux nanostructurés est sensiblement améliorée afin que soient produits des matériaux à dispersion stable présentant des potentiels zêta importants.

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