Process for preparing polysilicon using exothermic reaction

C - Chemistry – Metallurgy – 30 – B

Patent

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Details

23/326, 148/2.3,

C30B 29/06 (2006.01) C01B 33/03 (2006.01) C01B 33/035 (2006.01) C30B 25/02 (2006.01)

Patent

CA 2283562

The disclosure describes a process for the preparation of polysilicon by a thermal decomposition or hydrogen reduction of a reaction gas including a silane gas, which comprises introducing hydrogen chloride into a reactor in addition to the reaction gas and utilizing within the reactor the heat of reaction generated from the reaction between the hydrogen chloride and silicon as an additional heat source.

L'invention concerne un procédé de préparation de silicium polycristallin par décomposition thermique ou par réduction à l'hydrogène d'un gaz de réaction comprenant un silane gazeux. Ledit procédé consiste à introduire, outre le gaz de réaction, du chlorure d'hydrogène dans le réacteur et à utiliser dans ce dernier la chaleur de réaction générée par la réaction entre le chlorure d'hydrogène et le silicium comme source de chaleur additionnelle.

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