Process for preparing semiconductor layer

Details Process for preparing semiconductor layer Process for preparing semiconductor layer

H - Electricity

01

L

356/182

H01L 21/365 (2006.01) C23C 16/517 (2006.01) H01J 37/32 (2006.01) H01L 21/205 (2006.01)

Patent

CA 1227288

ABSTRACT OF THE DISCLOSURE An improved process for preparing a semiconductor layer by means of high frequency glow discharge generated between a ground electrode and a RF electrode, the improvement which comprises controlling a DC potential difference between the electrodes at a voltage of not more than 10 V. According to the process, the semiconductor layer formed on the RF electrode side is satisfactory in electrical and electronical properties, and can be practically used.

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