Process for preparing single crystal

C - Chemistry – Metallurgy – 30 – B

Patent

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148/1.2

C30B 15/14 (2006.01)

Patent

CA 1237640

- 1 - Abstract: The invention provides a process for preparing a single crystal which comprises drawing up a single crystal by the Czochralski process and cooling it from a temperature not lower than 600°C under a reduced pressure or in vacuo. The process provides a single crystal having a dislocation density of 1.5 x 104 cm2 or less.

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