Process for preparing superconducting thin films

Details Process for preparing superconducting thin films Process for preparing superconducting thin films

C - Chemistry, Metallurgy

23

C

356/179, 204/96.

C23C 14/28 (2006.01) C23C 14/00 (2006.01) C23C 14/08 (2006.01) C23C 14/32 (2006.01) C23C 14/58 (2006.01) H01L 39/24 (2006.01)

Patent

CA 2022359

In a process for forming a superconducting thin film of compound oxide on a substrate by vacuum deposition under the presence of high-frequency plasma while oxygen gas is supplied through a nozzle onto a surface of the substrate, after the deposition complete, the thin film deposited is further after-treated in the same vacuum chamber at a substrate temperature between 300°C and 600°C under the presence of high-frequency plasma with maintaining the oxygen gas supply.

Dans un procédé pour l'obtention d'une mince pellicule supraconductrice d'oxyde sur un substrat par dépôt sous vide en présence d'un plasma haute fréquence, de l'oxygène est envoyé par une buse sur une surface du substrat; une fois le dépôt terminé, la mince pellicule déposée est traitée dans le même compartiment sous vide, à une température de substrat se situant entre 300 et 600 degrés C, en présence d'un plasma haute fréquence, l'alimentation en oxygène gazeux étant maintenue.

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