Process for producing a semiconductor article

H - Electricity – 01 – L

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H01L 21/20 (2006.01) C30B 23/04 (2006.01) C30B 25/04 (2006.01) H01L 29/06 (2006.01)

Patent

CA 1296816

ABSTRACT OF THE DISCLOSURE A process for producing a semiconductor article comprises applying crystal formation treat- ment to a substrate having a free surface on which a nonnucleation surface exhibiting a smaller nucleation density and a nucleation surface of an amorphous material exhibiting a larger nucleation density and having a sufficiently minute area so as to allow only a single nucleus to be formed thereon are disposed next to each other whereby a semiconductor monocrystal is permitted to grow from the nucleus, the production conditions during said crystal formation treatment being varied to form semiconductor crystal regions different in their characteristics within at least part of said semiconductor monocrystal.

560004

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