H - Electricity – 01 – L
Patent
H - Electricity
01
L
356/178
H01L 21/20 (2006.01) C30B 23/04 (2006.01) C30B 25/04 (2006.01) H01L 29/06 (2006.01)
Patent
CA 1296816
ABSTRACT OF THE DISCLOSURE A process for producing a semiconductor article comprises applying crystal formation treat- ment to a substrate having a free surface on which a nonnucleation surface exhibiting a smaller nucleation density and a nucleation surface of an amorphous material exhibiting a larger nucleation density and having a sufficiently minute area so as to allow only a single nucleus to be formed thereon are disposed next to each other whereby a semiconductor monocrystal is permitted to grow from the nucleus, the production conditions during said crystal formation treatment being varied to form semiconductor crystal regions different in their characteristics within at least part of said semiconductor monocrystal.
560004
Ichikawa Takeshi
Yamagata Kenji
Canon Kabushiki Kaisha
Ridout & Maybee Llp
LandOfFree
Process for producing a semiconductor article does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Process for producing a semiconductor article, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for producing a semiconductor article will most certainly appreciate the feedback.
Profile ID: LFCA-PAI-O-1232780