Process for producing a semiconductor component

Details Process for producing a semiconductor component Process for producing a semiconductor component

H - Electricity

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H01L 21/02 (2006.01) H01L 21/22 (2006.01) H01L 21/223 (2006.01) H01L 21/265 (2006.01) H01L 29/207 (2006.01)

Patent

CA 1206628

ABSTRACT OF THE DISCLOSURE The invention relates to a semiconductor component comprising a semiinsulating substrate belong- ing to the group including GaAs and InP; a doped layer on said substrate implanted with ions of an impurity belonging to the group including oxygen, fluorine, chlorine and bromine; and said doped layer being doped by a diffused transition metal belonging to the group including zinc, cadnium and iron, and the invention is useful in semiconductor technology, in the production of electronic or optoelectronic devices using types III - V semiconductor compounds.

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