Process for producing a semiconductor laser with several...

Details Process for producing a semiconductor laser with several... Process for producing a semiconductor laser with several...

H - Electricity

01

S

345/32, 345/50

H01S 5/40 (2006.01) H01S 5/20 (2006.01) H01S 5/0625 (2006.01)

Patent

CA 1213343

ABSTRACT OF THE DISCLOSURE The process comprises the steps of: providing a semiconductor substrate; producing on the substrate by epitaxy a first double heterostructure that includes a first confinement layer, a first active layer having a first composition, a second confinement layer, a first contact layer and a first upper metal coating; etching the first double heterostructure up to the substrate through a mask having openings in the form of strips, this etching operation leading to strips of said double heterostructure, producing on the substrate in the etched portions a second double heterostructure with a third confinement layer, a second active layer having a second composition different from the first, a fourth confinement layer, a second contact layer and a second upper metal coating; carrying out a first etching of a first groove between a strip of said first heterostructure and the second double heterostructure, said groove being etched up to the first and second active layers; and undergoing a proton bombardment into the first groove.

425340

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