Process for producing an injection laser and laser obtained...

H - Electricity – 01 – S

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H01S 5/20 (2006.01) H01L 33/00 (2006.01)

Patent

CA 1158755

ABSTRACT OF THE DISCLOSURE Process for producing an injection laser and laser obtained by this process. The active layer is weakly n doped. The same mesa is used for carrying out a proton implantation and a zinc diffusion. The active stripe is transversely limited by two homo- junctions and two index jumps and the final structure is planar. In addition, there is an auto-alignment of the implanted and diffused zones. Application to the construction of lasers used in optical telecommunications systems.

359918

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