C - Chemistry – Metallurgy – 30 – B
Patent
C - Chemistry, Metallurgy
30
B
148/1
C30B 23/04 (2006.01) C30B 25/04 (2006.01) H01L 21/20 (2006.01) H01L 21/36 (2006.01) H01L 21/365 (2006.01)
Patent
CA 1321121
- 50 - ABSTRACT OF THE DISCLOSURE A process for producing a compound semiconductor comprises applying a crystal forming treatment on a substrate having a free surface comprising a nonnucleation surface (SNDs) with smaller nucleation density and a nucleation surface (SNDL) arranged adjacent thereto having a sufficiently small area for a crystal to grow only from a single nucleus and a larger nucleation density (NDL) than the nucleation density (NDS) of said nonnucleation surface (SNDs), by exposing the substrate to either of the gas phases: (a) gas phase (a) containing a starting material (II) for feeding the group II atoms of the periodic table and a starting material (VI) for feeding the group VI atoms of the periodic table and (b) gas phase (b) containing a starting material (III) for feeding the group III atoms of the periodic table and a starting material (V) for feeding the group V atoms of the periodic table, thereby forming only a single nucleus on said nucleation surface (SNDL) and permitting a monocrystal of the compound semiconductor to grow from said single nucleus, characterized in that a semiconductor junction is formed in said monocrystal by feeding a starting material (Dn) for feeding a dopant for controlling to one - 51 - electroconduction type and a starting material (Dp) for feeding a dopant for controlling to the electroconduction type opposite to said electrcondition type with change-over to one another into said gas phase, during said crystal forming treatment.
562514
Tokunaga Hiroyuki
Yamagata Kenji
Yonehara Takao
Canon Kabushiki Kaisha
Ridout & Maybee Llp
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