C - Chemistry – Metallurgy – 30 – B
Patent
C - Chemistry, Metallurgy
30
B
148/2.1, 148/2.4
C30B 25/02 (2006.01) C30B 23/02 (2006.01) C30B 25/10 (2006.01) C30B 25/18 (2006.01) C30B 33/00 (2006.01) H01L 21/20 (2006.01) H01L 21/268 (2006.01)
Patent
CA 1332342
ABSTRACT OF THE DISCLOSURE A process for producing a crystal comprises the step of applying crystal forming treatment on a light- transmissive substrate having a non-nucleation surface (SNDS) of a small nucleation density and a nucleation surface (SNDL) of a nucleation density (NDL) greater than the nucleation density (NDS) of said non-nucleation surface (SNDS) and formed of an amorphous material (ML) different from the material (MS) forming the non- nucleation surface (SNDS) at a small area sufficient to effect crystal growth from only a single nucleus to form a single crystal nucleus on the nucleation surface (SNDL), thereby growing a single crystal from the single nucleus, and the step of reducing the crystal defects of the crystal in the vicinity of the interface with the substrate by irradiation of light from the side of the substrate.
560251
Canon Kabushiki Kaisha
Ridout & Maybee Llp
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