Process for producing doped semiconductor layers

Details Process for producing doped semiconductor layers Process for producing doped semiconductor layers

H - Electricity

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356/178

H01L 21/38 (2006.01) H01L 21/22 (2006.01) H01L 21/225 (2006.01)

Patent

CA 2031537

-10- A b s t r a c t Disclosed is a process for producing doped semiconductor layers having a low concentration of charge carriers. The present invention is distinguished by a multiplicity of thin layers being applied on top of each other having alternately comparatively high concentrations of charge carriers and no doping and the thickness and the concen- tration of charge carriers of the individual layers being proportioned in such a manner that the desired low concen- tration of charge carriers is yielded by averaging the multiplicity of layers.

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