Process for producing integrated circuit devices by ion...

Details Process for producing integrated circuit devices by ion... Process for producing integrated circuit devices by ion...

H - Electricity

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H01L 21/265 (2006.01) H01L 21/033 (2006.01) H01L 21/331 (2006.01)

Patent

CA 1106981

IMPROVED PROCESS FOR PRODUCING INTEGRATED CIRCUIT DEVICES BY ION IMPLANTATION Abstract Of The Disclosure In this process of producing a bipolar transistor, all the regions of the device except the emitter region are formed by ion implantation through an inorganic dielectric layer of uniform thickness. Subsequently, all the contact openings to the emitter, base and collector are formed and the emitter is implanted through the emitter contact open- ing. This unique combination of process steps permits the use of a surface insulating dielectric layer of uniform thickness, wherein all capacitances are uniform and con- trollable while still permitting direct implantation of the emitter, which, because of its shallow depth is difficult to implant through an oxide.

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