C - Chemistry – Metallurgy – 23 – C
Patent
C - Chemistry, Metallurgy
23
C
148/2.8
C23C 14/48 (2006.01) C23C 14/58 (2006.01) H01F 41/34 (2006.01)
Patent
CA 1231629
PROCESS FOR PRODUCING ION IMPLANTED BUBBLE DEVICE ABSTRACT OF THE DISCLOSURE A process for producing an ion implanted bubble device having bubble propagation tracks formed by implanting ions in a magnetic layer formed on a substrate. The process includes: a step for implanting ions in the magnetic layer for forming a desirable bubble propagation track thereon; a step for exposing the ion implanted magnetic layer to plasma in order to enhance the anisotropy field change .DELTA.Hk; a step for coating an intermediate insulation film over the magnetic layer treated with plasma; and a step for forming bubble propagation patterns of ferromagnetic material and/or conductor patterns of conductive material on the intermediate insulation film.
461786
Betsui Keiichi
Miyashita Tsutomu
Fujitsu Limited
Mcfadden Fincham
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