C - Chemistry – Metallurgy – 30 – B
Patent
C - Chemistry, Metallurgy
30
B
356/182, 148/2.1
C30B 15/02 (2006.01) C23C 16/01 (2006.01) C30B 13/00 (2006.01) C30B 13/06 (2006.01)
Patent
CA 1062130
ABSTRACT OF THE DISCLOSURE Process for producing large-size, self-supporting plates of silicon deposited from the gaseous phase on a substrate body, which comprises heating a graphite sub- strate to deposition temperature of silicon, which is de- posited on the substrate from a gaseous compound to which a dopant has been added until a layer of about 200 to 650 µm has formed, subsequently melting 40-100% of this layer from the free surface downward, resolidifying the molten silicon by adjustment of a temperature gradient from the substrate body upward, and finally separating the silicon therefrom. The plates so formed are used primarily for making solar cells.
266985
Authier Bernhard
Griesshammer Rudolf
Koppl Franz
Lang Winfried
Rath Heinz-Jorg
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