Process for producing large-size substrate-based...

Details Process for producing large-size substrate-based... Process for producing large-size substrate-based...

H - Electricity

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H01L 21/477 (2006.01) C30B 13/00 (2006.01) C30B 13/06 (2006.01) H01L 21/205 (2006.01) H01L 21/84 (2006.01) H01L 31/00 (2006.01) H01L 31/18 (2006.01)

Patent

CA 1074428

ABSTRACT OF THE DISCLOSURE A process for producing large-size, substrate- based semiconductor material of silicon deposited on a substrate body from the gaseous phase, which comprises the steps of heating a substrate body by direct current passage to deposition temperature, contacting said body with a gaseous silicon-containing mixture to which a dopant has been added, until a deposit having a thickness from about 10 to 200 µm has been formed, subsequently melting 80 to 100% of the deposited silicon layer from the free surface downward, and resolidifying the molten silicon by adjust- ment of a temperature gradient from the substrate body up- ward. Large-sized plates obtained by cutting up the semi- conductor material are used as solar cells.

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