C - Chemistry – Metallurgy – 30 – B
Patent
C - Chemistry, Metallurgy
30
B
148/1.5, 148/3.8
C30B 29/40 (2006.01) C30B 11/00 (2006.01) C30B 15/00 (2006.01) C30B 29/42 (2006.01) C30B 29/48 (2006.01)
Patent
CA 2025119
Abstract This disclosure relates to 2 process for producing monocrystalline Group II-VI or Group III-V compounds from the polycrystalline form of said Group I I-VI or Group III-V compound, said process comprising coating the interior surface of a crucible with a powdered solid having a melting point higher than the polycrystalline form of the compound, placing an amount of polycrystalline compound into the coated crucible, heating the crucible to produce a melt while maintaining the powder in solid form and cooling the crucible to produce a solid compound. The preferred powdered solid is pyrolitic boron nitride. The process may be used to produce, inter alia, semi- insulating gallium arsenide having a neutral EL2 concentration between about 0,85 x 1016cm-3 and about 2,0 x 1016cm-3 and a dislocation density between about 500 cm-2 and about 7800 cm-2.
Francomano David Michael
Kremer Russell Eugene
Crystal Specialties Inc.
Swabey Ogilvy Renault
LandOfFree
Process for producing monocrystalline group ii-vi or group... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Process for producing monocrystalline group ii-vi or group..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for producing monocrystalline group ii-vi or group... will most certainly appreciate the feedback.
Profile ID: LFCA-PAI-O-1352177